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VISHAY
TSML3710
Vishay Semiconductors
GaAs/GaAlAs Infrared Emitting Diode in SMT Package
Description
TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC2 SMD package.
Features
* * * * * SMT IRED with extra high radiant power Low forward voltage Compatible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process * Packed in 8 mm tape * * * * Suitable for pulse current operation Extra wide angle of half intensity = 60 Peak wavelength p = 950 nm Matched with TEMT3700 phototransistor
94 8553
Applications
IR emitter in photointerrupters, transmissive sensors and reflective sensors Household appliance IR emitter in low space applications Tactile keyboards
Parts Table
Part TSML3710 Ordering code TSML3710-GS08 Remarks MOQ 7500pcs (1500 pcs per reel)
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient t 10sec tp/T = 0.5, tp = 100 s tp = 100 s Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1 170 100 - 40 to + 85 - 40 to +100 260 450 Unit V mA mA A mW C C C C K/W
Document Number 81075 Rev. 3, 06-Jun-03
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TSML3710
Vishay Semiconductors Basic Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity Radiant Power Temp. Coefficient of e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of p Rise Time Fall Time IF = 100 mA IF = 100 mA IF = 100 mA IF = 20 mA IF = 1 A IF = 20 mA IF = 1 A Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 1 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA, tp = 20 ms IF = 100 mA Symbol VF VF TKVF IR Cj Ie Ie e TKe p TKp tr tr tf tf 4 25 8 60 35 -0.6 60 950 50 0.2 800 500 800 500 Min Typ. 1.35 2.6 -1.85 100 Max 1.7 3.2
VISHAY
Unit V V mV/K A pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns
Typical Characteristics (Tamb = 25 C unless otherwise specified)
250
PV -Power Dissipation (mW)
125
I F - Forward Current ( mA )
200 150 RthJA 100 50 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
100 75 50 25 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) RthJA
16846
16847
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
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Document Number 81075 Rev. 3, 06-Jun-03
VISHAY
TSML3710
Vishay Semiconductors
100
I e - Radiant Intensity ( mW/sr )
10000
I F - Forward Current ( mA )
0.1 1000 0.2 100 0.5 1.0
0.05
0.02
tp / T = 0.01
10
1
10 0.01
14335
0.10
1.00
10.00
100.00
15903
0.1 10 0
t p - Pulse Duration ( ms )
10 1 10 2 10 3 I F - Forward Current ( mA )
10 4
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
10 4
I F - Forward Current ( mA ) Radiant Power ( mW )
e -
1000
10 3
100
10 2
t p = 100 s tp / T = 0.001
10
10 1
1
10 0 0
13600
1
2
3
4
0.1 10 0
94 8740
V F - Forward Voltage ( V )
10 1 10 2 10 3 I F - Forward Current ( mA )
10 4
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Radiant Power vs. Forward Current
1.2 1.1 1.0 0.9 0.8 0.7 0
16848
1.6 1.4 IF = 20 mA
Forward Voltage ( V )
IF = 1 mA
I c rel / F c rel
1.2 1.0 0.8 0.6 0.4 0.2
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
0.0 -10 0 10 20 30 40 50 60 70 80 90 100
16849
Tamb - Ambient Temperature ( C )
Figure 5. Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
Document Number 81075 Rev. 3, 06-Jun-03
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TSML3710
Vishay Semiconductors
VISHAY
1.25
e rel - Relative Radiant Power
1.0
0.75 0.5
0.25 I F = 100 mA 0 900 950 - Wavelength ( nm ) 1000
94 7994 e
Figure 9. Relative Radiant Power vs. Wavelength
0
I e rel - Relative Radiant Intensity
10
20 30
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
94 8013
Figure 10. Relative Radiant Intensity vs. Angular Displacement
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Document Number 81075 Rev. 3, 06-Jun-03
VISHAY
Package Dimensions in mm
TSML3710
Vishay Semiconductors
95 11314
Pad Layout
95 10966
Document Number 81075 Rev. 3, 06-Jun-03
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TSML3710
Vishay Semiconductors Temperature - Time Profile
VISHAY
Adhesive Tape
300 250
Temperature ( C )
94 8625
max. 240 C
ca. 230 C
10 s
Blister Tape
215 C
max 40 s
200 150 100 50
2 K/s - 4 K/s
max. 160 C 90 s - 120 s
Lead Temperature
full line : typical dotted line : process limits
Component Cavity
94 8670
0
0
50
100 150 Time ( s )
200
250
Figure 12. Blister Tape
Figure 11. Infrared Reflow Soldering Optodevices (SMD Package)
Drypack
Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant.
3.5 3.1
2.2 2.0
5.75 5.25 3.6 3.4 8.3 7.7
4.0 3.6
Floor Life
Floor life (time between soldering and removing from MBB) must not exceed the time indicated in J-STD-020. TSML 3710 is released for: Moisture Sensitivity Level 2, according to JEDEC, J-STD-020 Floor Life: 1 year Conditions: Tamb < 30C, RH < 60%
1.85 1.65
1.6 1.4
4.1 3.9
2.05 1.95
4.1 3.9
0.25
94 8668
Figure 13. Tape Dimensions in mm for PLCC-2
Drying
In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or Label. Devices taped on reel dry using recommended conditions 192 h @ 40C (+ 5C), RH < 5%
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Document Number 81075 Rev. 3, 06-Jun-03
VISHAY
Missing Devices
A maximum of 0.5% of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components.
TSML3710
Vishay Semiconductors Cover Tape Removal Force
The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the bliesters, the cover tape must be pulled off at an angle of 180 with regard to the feed direction.
De-reeling direction
94 8158
> 160 mm 40 empty compartments min. 75 empty compartments
Tape leader
Carrier leader
Carrier trailer
Figure 14. Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartements. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least comoponent is followed by a carrier tape trailer with a least 75 empty compartements and sealed with cover tape.
10.0 9.0
120 4.5 3.5 2.5 1.5 Identification Label: Tfk Type Group Tape Code Production Code Quantity
13.00 12.75 63.5 60.5
180 178
14.4 max.
94 8665
Figure 15. Dimensions of Reel
Document Number 81075 Rev. 3, 06-Jun-03
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TSML3710
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 81075 Rev. 3, 06-Jun-03

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